2D/3D Heterointegration: A new take on developing diamond-based electronics

Dr. Anirudha Sumant, Group Leader and Materials Scientist at the Center for Nanoscale Materials, Argonne National Laboratory will present a seminar titled "2D/3D Heterointegration: A new take on developing diamond-based electronics" to the interested faculty and students at Discovery Park.

Abstract

Diamond is a highly promising material for next-generation power electronics due to its exceptional thermal conductivity, wide bandgap, high electric field strength, radiation hardness, and superior carrier mobilities. However, the advancement of diamond-based devices has been constrained by critical challenges, including the lack of reliable n-type transport at room temperature, high synthesis temperatures, and limited scalability.

In this talk, I will present our efforts at Argonne to overcome these limitations through heterointegration with two-dimensional (2D) and other semiconductor materials [1-2]. In particular, we address the long-standing challenge of n-type doping in diamond by integrating n-type 2D molybdenum disulfide (MoS₂) monolayers with boron-doped p-type single-crystal diamond to form 2D/3D heterostructure PN junction diodes [3]. These devices demonstrate excellent room-temperature rectification, with a forward current density of ~4000 A/cm², an ideality factor of ~3.7, and a rectification ratio approaching 10⁶. We further show that the rectification behavior arises from interlayer recombination of majority carriers, governed by direct tunneling and Fowler–Nordheim tunneling mechanisms. Beyond device demonstration, I will discuss strategies for wafer-scale integration and the potential for operation under extreme environment conditions. These results highlight a scalable pathway toward high-performance diamond-based electronics enabled by strategic heterointegration with 2D materials.

Bio

Dr. Anirudha Sumant is Group Leader of the Nanofabrication and Devices Group and a Materials Scientist at the Center for Nanoscale Materials, Argonne National Laboratory. He leads research in nanocarbon materials, with a focus on engineering advanced heterointerfaces that enable next-generation energy-efficient technologies. His research encompasses the electronic, mechanical, and interfacial properties of advanced carbon materials including chemical vapor deposited (CVD) diamond, graphene, and other two-dimensional (2D) materials as well as their surface chemistry and integration into micro- and nanoscale devices for applications in electronics, energy systems, and extreme-environment operation. He has authored or co-authored more than 170 peer-reviewed journal articles and conference proceedings, contributed two book chapters, and holds 40 granted patents. His research and innovation have been recognized through numerous prestigious honors, including four R&D 100 Awards, the NASA Tech Briefs Magazine Award, three TechConnect National Innovation Awards, the Pinnacle of Education Award, and the Excellence in Commercialization Award. An active leader in the scientific community, Dr. Sumant is a member of the Materials Research Society (MRS), the Society of Tribologists and Lubrication Engineers (STLE), and the American Vacuum Society (AVS). He serves on the Editorial Advisory Board of Applied Physics Letters and is the Specialty Chief Editor of Frontiers in Carbon, where he helps shape the direction of emerging research in carbon-based materials.